All MOSFET. AP8N4R2MT Datasheet

 

AP8N4R2MT Datasheet and Replacement


   Type Designator: AP8N4R2MT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: PMPAK5X6
 

 AP8N4R2MT substitution

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AP8N4R2MT Datasheet (PDF)

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AP8N4R2MT

AP8N4R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VD SO-8 Compatible with Heatsink RDS(ON) 4.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8N4R2 series are from Advanced Power innovated design andsilicon process technology to achieve th

Datasheet: AP9410GH , AP9410AGH , AP93T03AGH , AP8N8R0P , AP8N8R0MT , AP8N8R0J , AP8N8R0I , AP8N8R0H , 50N06 , AP8N3R5CMT , AP8604CDT , AP8600S , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , AP80WN2K5I .

History: YJL2301G

Keywords - AP8N4R2MT MOSFET datasheet

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