AP8N4R2MT PDF and Equivalents Search

 

AP8N4R2MT Specs and Replacement

Type Designator: AP8N4R2MT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: PMPAK5X6

AP8N4R2MT substitution

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AP8N4R2MT datasheet

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 ap8n4r2mt.pdf pdf_icon

AP8N4R2MT

AP8N4R2MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80V D SO-8 Compatible with Heatsink RDS(ON) 4.2m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP8N4R2 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

Detailed specifications: AP9410GH, AP9410AGH, AP93T03AGH, AP8N8R0P, AP8N8R0MT, AP8N8R0J, AP8N8R0I, AP8N8R0H, 50N06, AP8N3R5CMT, AP8604CDT, AP8600S, AP8600P, AP8600MT-L, AP8600MT, AP85T10AGP, AP80WN2K5I

Keywords - AP8N4R2MT MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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