AP8N4R2MT MOSFET. Datasheet pdf. Equivalent
Type Designator: AP8N4R2MT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 26.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 61 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 1700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PMPAK5X6
AP8N4R2MT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP8N4R2MT Datasheet (PDF)
ap8n4r2mt.pdf
AP8N4R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VD SO-8 Compatible with Heatsink RDS(ON) 4.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8N4R2 series are from Advanced Power innovated design andsilicon process technology to achieve th
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100