All MOSFET. AP8N3R5CMT Datasheet

 

AP8N3R5CMT Datasheet and Replacement


   Type Designator: AP8N3R5CMT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1615 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: PMPAK5X6
 

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AP8N3R5CMT Datasheet (PDF)

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AP8N3R5CMT

AP8N3R5CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 80VD SO-8 Compatible with Heatsink RDS(ON) 3.5m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8N3R5C series are from Advanced Power innovated design andsilicon process technology to achieve the lo

Datasheet: AP9410AGH , AP93T03AGH , AP8N8R0P , AP8N8R0MT , AP8N8R0J , AP8N8R0I , AP8N8R0H , AP8N4R2MT , IRF640 , AP8604CDT , AP8600S , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , AP80WN2K5I , AP80SL990BJB .

History: SMIRF13N50T2TL | WMM10N100C2 | SI7455DP | DMN2014LHAB | MTM12P05 | NP50P04KDG | R6030MNX

Keywords - AP8N3R5CMT MOSFET datasheet

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