All MOSFET. AP78T10GP Datasheet

 

AP78T10GP Datasheet and Replacement


   Type Designator: AP78T10GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 138.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220
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AP78T10GP Datasheet (PDF)

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AP78T10GP

AP78T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 14m Fast Switching Characteristic ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAP78T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

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AP78T10GP

AP78T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 14m Fast Switching Characteristic ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugge

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History: SI5403DC | AOWF15S65 | IRFF230 | IPU039N03LG | IXFR48N50Q | HYG045N03LA1C1 | SRM4N65U

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