AP78T10GP Specs and Replacement
Type Designator: AP78T10GP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 138.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220
AP78T10GP substitution
- MOSFET ⓘ Cross-Reference Search
AP78T10GP datasheet
ap78t10gp.pdf
AP78T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 14m Fast Switching Characteristic ID 68A G RoHS Compliant & Halogen-Free S Description AP78T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest ... See More ⇒
ap78t10gp-hf.pdf
AP78T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 14m Fast Switching Characteristic ID 68A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rugge... See More ⇒
Detailed specifications: AP80SL990BJB, AP80SL990BI, AP80SL990BH, AP80SL650AI, AP80SL400DI, AP80SL400AS, AP80SL400AP, AP80SL400AI, 8205A, AP76T03AGMT, AP75T12GI, AP70WN2K8L, AP70WN2K8I, AP70WN2K8H, AP70WN1K5P, AP70WN1K5I, AP70SL950AJB
Keywords - AP78T10GP MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AP76T03AGMT | LSE65R180GF
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