AP6N8R2LMT MOSFET Datasheet: N-Ch, 60V, 18.8A. Full specification with pinout and replacement list

AP6N8R2LMT Specs and Replacement

Type Designator: AP6N8R2LMT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 1330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: PMPAK5X6

AP6N8R2LMT substitution

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AP6N8R2LMT datasheet

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AP6N8R2LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D SO-8 Compatible with Heatsink RDS(ON) 8.2m Ultra Low On-resistance ID 60A G RoHS Compliant & Halogen-Free D S D D Description D AP6N8R2L series are from Advanced Power innovated design and silicon process technology to achieve... See More ⇒

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AP6N8R2ALH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 8.2m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description G AP6N8R2AL series are from Advanced Power innovated design D S TO-252(H) and silicon process technology t... See More ⇒

Detailed specifications: AP6P064JB, AP6P064J, AP6P064I, AP6P064H, AP6P025S, AP6P025P, AP6P025I, AP6P025H, SI2302, AP6N8R2ALH, AP6N6R5P, AP6N6R5LMT-L, AP6N6R5LMT, AP6N6R5I, AP6N6R5H, AP6N4R2P, AP6N4R0I