AP6N8R2LMT MOSFET. Datasheet pdf. Equivalent
Type Designator: AP6N8R2LMT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 1330 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: PMPAK5X6
AP6N8R2LMT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP6N8R2LMT Datasheet (PDF)
ap6n8r2lmt.pdf
AP6N8R2LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 8.2m Ultra Low On-resistance ID 60AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N8R2L series are from Advanced Power innovated design andsilicon process technology to achieve
ap6n8r2alh.pdf
AP6N8R2ALHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 8.2m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N8R2AL series are from Advanced Power innovated designDSTO-252(H)and silicon process technology t
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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