IRFI510A Spec and Replacement
Type Designator: IRFI510A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO262
IRFI510A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI510A Specs
irfi510g.pdf
Document Number 90178 www.vishay.com 563 Document Number 90178 www.vishay.com 564 Document Number 90178 www.vishay.com 565 Document Number 90178 www.vishay.com 566 Document Number 90178 www.vishay.com 567 Document Number 90178 www.vishay.com 568 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o... See More ⇒
irfi510g irfi510gpbf sihfi510g.pdf
IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low... See More ⇒
irfi510g sihfi510g.pdf
IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low... See More ⇒
Detailed specifications: IRFF9220 , IRFF9230 , IRFI1010N , IRFI1310N , IRFI3205 , IRFI3710 , IRFI460 , IRFI4905 , CS150N03A8 , IRFI520A , IRFI520N , IRFI5210 , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A .
Keywords - IRFI510A MOSFET specs
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