All MOSFET. IRFI510A Datasheet

 

IRFI510A Datasheet and Replacement


   Type Designator: IRFI510A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO262
 

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IRFI510A Datasheet (PDF)

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IRFI510A

 7.1. Size:159K  international rectifier
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IRFI510A

Document Number: 90178 www.vishay.com563Document Number: 90178 www.vishay.com564Document Number: 90178 www.vishay.com565Document Number: 90178 www.vishay.com566Document Number: 90178 www.vishay.com567Document Number: 90178 www.vishay.com568Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o

 7.2. Size:1038K  vishay
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IRFI510A

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

 7.3. Size:1040K  vishay
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IRFI510A

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

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Datasheet: IRFF9220 , IRFF9230 , IRFI1010N , IRFI1310N , IRFI3205 , IRFI3710 , IRFI460 , IRFI4905 , IRLB4132 , IRFI520A , IRFI520N , IRFI5210 , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A .

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