IRFI510A Datasheet. Specs and Replacement

Type Designator: IRFI510A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO262

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IRFI510A datasheet

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IRFI510A

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IRFI510A

Document Number 90178 www.vishay.com 563 Document Number 90178 www.vishay.com 564 Document Number 90178 www.vishay.com 565 Document Number 90178 www.vishay.com 566 Document Number 90178 www.vishay.com 567 Document Number 90178 www.vishay.com 568 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o... See More ⇒

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IRFI510A

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low... See More ⇒

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IRFI510A

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low... See More ⇒

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Detailed specifications: IRFF9220, IRFF9230, IRFI1010N, IRFI1310N, IRFI3205, IRFI3710, IRFI460, IRFI4905, CS150N03A8, IRFI520A, IRFI520N, IRFI5210, IRFI530A, IRFI530N, IRFI540A, IRFI540N, IRFI550A

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