All MOSFET. AP60AN750IN Datasheet

 

AP60AN750IN Datasheet and Replacement


   Type Designator: AP60AN750IN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F-NL
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AP60AN750IN Datasheet (PDF)

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AP60AN750IN

AP60AN750INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60AN750 series are from the innovated design and siliconprocess technology to achieve the lowest possible on

 4.1. Size:59K  ape
 ap60an750i.pdf pdf_icon

AP60AN750IN

AP60AN750IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60AN750 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

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History: AP50WN650I | 5N65KL-TMS4-T | CEM7808

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