AP60AN750IN Spec and Replacement
Type Designator: AP60AN750IN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F-NL
AP60AN750IN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP60AN750IN Specs
ap60an750in.pdf
AP60AN750IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP60AN750 series are from the innovated design and silicon process technology to achieve the lowest possible on... See More ⇒
ap60an750i.pdf
AP60AN750I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP60AN750 series are from the innovated design and silicon process technology to achieve the lowest possible on-... See More ⇒
Detailed specifications: AP60SL280AIN , AP60SL280AI , AP60SL150AR , AP60SL150AP , AP60SL150AI , AP60SL115AI , AP60N2R5J , AP60N2R5IN , AO4468 , AP60AN750I , AP5602P , AP55T10GR , AP55T10GP , AP55T10GI , AP55T10GH , AP55T06GI , AP50WN750P .
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