AP60AN750IN MOSFET. Datasheet pdf. Equivalent
Type Designator: AP60AN750IN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 72 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F-NL
AP60AN750IN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP60AN750IN Datasheet (PDF)
ap60an750in.pdf
AP60AN750INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60AN750 series are from the innovated design and siliconprocess technology to achieve the lowest possible on
ap60an750i.pdf
AP60AN750IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60AN750 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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