All MOSFET. AP60AN750IN Datasheet

 

AP60AN750IN Datasheet and Replacement


   Type Designator: AP60AN750IN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F-NL
 

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AP60AN750IN Datasheet (PDF)

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AP60AN750IN

AP60AN750INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60AN750 series are from the innovated design and siliconprocess technology to achieve the lowest possible on

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AP60AN750IN

AP60AN750IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60AN750 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-

Datasheet: AP60SL280AIN , AP60SL280AI , AP60SL150AR , AP60SL150AP , AP60SL150AI , AP60SL115AI , AP60N2R5J , AP60N2R5IN , IRFP064N , AP60AN750I , AP5602P , AP55T10GR , AP55T10GP , AP55T10GI , AP55T10GH , AP55T06GI , AP50WN750P .

History: FQB30N06LTM | NX7002BK | RU1H130Q | AM3460N | AP70SL380AH | NCE60H10K | VN10K

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