AP60AN750IN Datasheet. Specs and Replacement

Type Designator: AP60AN750IN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220F-NL

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AP60AN750IN datasheet

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AP60AN750IN

AP60AN750IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP60AN750 series are from the innovated design and silicon process technology to achieve the lowest possible on... See More ⇒

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AP60AN750IN

AP60AN750I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP60AN750 series are from the innovated design and silicon process technology to achieve the lowest possible on-... See More ⇒

Detailed specifications: AP60SL280AIN, AP60SL280AI, AP60SL150AR, AP60SL150AP, AP60SL150AI, AP60SL115AI, AP60N2R5J, AP60N2R5IN, AO4468, AP60AN750I, AP5602P, AP55T10GR, AP55T10GP, AP55T10GI, AP55T10GH, AP55T06GI, AP50WN750P

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