IRFI614G MOSFET Datasheet: N-Ch, 250V, 2.1A. Full specification with pinout and replacement list

IRFI614G Specs and Replacement

Type Designator: IRFI614G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO220F

IRFI614G substitution

- MOSFET ⓘ Cross-Reference Search

IRFI614G datasheet

..1. Size:286K international rectifier
irfi614g.pdf pdf_icon

PD - 95605 IRFI614GPbF Lead-Free 7/28/04 Document Number 91145 www.vishay.com 1 IRFI614GPbF Document Number 91145 www.vishay.com 2 IRFI614GPbF Document Number 91145 www.vishay.com 3 IRFI614GPbF Document Number 91145 www.vishay.com 4 IRFI614GPbF Document Number 91145 www.vishay.com 5 IRFI614GPbF Document Number 91145 www.vishay.com 6 IRFI614GPbF Peak Diode R... See More ⇒

..2. Size:953K vishay
irfi614g sihfi614g.pdf pdf_icon

IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 8.2 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Low Thermal Resistance Configuration ... See More ⇒

7.1. Size:209K 1
irfi614a irfw614a.pdf pdf_icon