IRFI614G Datasheet and Replacement
Type Designator: IRFI614G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 8.2(max) nC
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220F
IRFI614G substitution
IRFI614G Datasheet (PDF)
irfi614g.pdf
PD - 95605IRFI614GPbF Lead-Free7/28/04Document Number: 91145 www.vishay.com1IRFI614GPbFDocument Number: 91145 www.vishay.com2IRFI614GPbFDocument Number: 91145 www.vishay.com3IRFI614GPbFDocument Number: 91145 www.vishay.com4IRFI614GPbFDocument Number: 91145 www.vishay.com5IRFI614GPbFDocument Number: 91145 www.vishay.com6IRFI614GPbFPeak Diode R
irfi614g sihfi614g.pdf
IRFI614G, SiHFI614GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.0f = 60 Hz)RoHS*Qg (Max.) (nC) 8.2COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Low Thermal ResistanceConfiguration
Datasheet: IRFI5210 , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , 5N65 , IRFI620A , IRFI620G , IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , IRFI634G .
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