All MOSFET. IRFI614G Datasheet

 

IRFI614G Datasheet and Replacement


   Type Designator: IRFI614G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F
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IRFI614G Datasheet (PDF)

 ..1. Size:286K  international rectifier
 irfi614g.pdf pdf_icon

IRFI614G

PD - 95605IRFI614GPbF Lead-Free7/28/04Document Number: 91145 www.vishay.com1IRFI614GPbFDocument Number: 91145 www.vishay.com2IRFI614GPbFDocument Number: 91145 www.vishay.com3IRFI614GPbFDocument Number: 91145 www.vishay.com4IRFI614GPbFDocument Number: 91145 www.vishay.com5IRFI614GPbFDocument Number: 91145 www.vishay.com6IRFI614GPbFPeak Diode R

 ..2. Size:953K  vishay
 irfi614g sihfi614g.pdf pdf_icon

IRFI614G

IRFI614G, SiHFI614GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.0f = 60 Hz)RoHS*Qg (Max.) (nC) 8.2COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Low Thermal ResistanceConfiguration

 7.1. Size:209K  1
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IRFI614G

 8.1. Size:205K  1
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IRFI614G

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Datasheet: IRFI5210 , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , STF13NM60N , IRFI620A , IRFI620G , IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , IRFI634G .

History: MTN2N70FP | CS20N50ANH | DMNH10H028SCT | FRE160R | UPA2738GR | 4420 | IRLS4030

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