All MOSFET. AP50PN520R Datasheet

 

AP50PN520R Datasheet and Replacement


   Type Designator: AP50PN520R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO262
 

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AP50PN520R Datasheet (PDF)

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AP50PN520R

AP50PN520RHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 0.52 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP50PN520 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

Datasheet: AP50WN1K0H , AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI , AP50T10GH , AP50T10AGI , AP50SL290DH , AON7408 , AP4P052J , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES , AP4P013LEP , AP4P012LEH .

History: VBZM30N06 | IRFBC30P

Keywords - AP50PN520R MOSFET datasheet

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