IRFI620A Datasheet and Replacement
Type Designator: IRFI620A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 12 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO262
IRFI620A substitution
IRFI620A Datasheet (PDF)
irfi620g.pdf

PD - 95606IRFI620GPbF Lead-Free7/29/04Document Number: 91146 www.vishay.com1IRFI620GPbFDocument Number: 91146 www.vishay.com2IRFI620GPbFDocument Number: 91146 www.vishay.com3IRFI620GPbFDocument Number: 91146 www.vishay.com4IRFI620GPbFDocument Number: 91146 www.vishay.com5IRFI620GPbFDocument Number: 91146 www.vishay.com6IRFI620GPbFPeak Diode R
irfi620g sihfi620g.pdf

IRFI620G, SiHFI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.80f = 60 Hz) RoHS*Qg (Max.) (nC) 14COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 7.9 Low Thermal ResistanceConfiguration S
Datasheet: IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , IRFI614G , STP80NF70 , IRFI620G , IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , IRFI634G , IRFI640A .
History: FTK50N06
Keywords - IRFI620A MOSFET datasheet
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History: FTK50N06



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