All MOSFET. AP4N4R2H Datasheet

 

AP4N4R2H Datasheet and Replacement


   Type Designator: AP4N4R2H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO252
 

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AP4N4R2H Datasheet (PDF)

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AP4N4R2H

AP4N4R2HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 40V Simple Drive Requirement RDS(ON) 4.2m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N4R2 seriesare fromAdvanced Power innovated designG

Datasheet: AP4P052J , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES , AP4P013LEP , AP4P012LEH , 5N60 , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT , AP4N2R6J .

History: SFG10S20DF | DHS020N04E

Keywords - AP4N4R2H MOSFET datasheet

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