AP4N4R2H Datasheet. Specs and Replacement

Type Designator: AP4N4R2H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO252

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AP4N4R2H datasheet

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AP4N4R2H

AP4N4R2H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 40V Simple Drive Requirement RDS(ON) 4.2m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP4N4R2 seriesare fromAdvanced Power innovated design G... See More ⇒

Detailed specifications: AP4P052J, AP4P052H, AP4P016P, AP4P016I, AP4P016H, AP4P013LES, AP4P013LEP, AP4P012LEH, IRLB4132, AP4N3R6P, AP4N3R6H, AP4N3R2MT, AP4N3R2I, AP4N2R6S, AP4N2R6P, AP4N2R6MT, AP4N2R6J

Keywords - AP4N4R2H MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.