AP4N1R1CDT-A MOSFET: N-Ch, 45V, 50.6A. Full specification with pinout and replacement list

AP4N1R1CDT-A Specs

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AP4N1R1CDT-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45V D 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP4N1R1C series are from Advanced Power innovated design and silicon process technology to a... See More ⇒

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ap4n1r8cmt-a.pdf pdf_icon

AP4N1R8CMT-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45V D Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180A G RoHS Compliant & Halogen-Free D S D D Description D AP4N1R8C series are from Advanced Power innovated design and silicon process technology to achieve ... See More ⇒

9.1. Size:936K cn apm
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AP4N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP4N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 3.8A DS D R ... See More ⇒

9.2. Size:2029K cn apm
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AP4N15MI 150V N-Channel Enhancement Mode MOSFET Description The AP4N15MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =4A DS D R ... See More ⇒

Detailed specifications: AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT , AP4N2R6J , AP4N2R6H , AP4N2R6AMT , AP4N1R8CMT-A , IRF1010E , AP4820AGYT , AP4804MT , AP4800N2 , AP4618CDT , AP4610P , AP4608S , AP4608P , AP4606P .