All MOSFET. AP4N1R1CDT-A Datasheet

 

AP4N1R1CDT-A Datasheet and Replacement


   Type Designator: AP4N1R1CDT-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 1330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
   Package: PDFN5X6
 

 AP4N1R1CDT-A substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP4N1R1CDT-A Datasheet (PDF)

 ..1. Size:137K  ape
 ap4n1r1cdt-a.pdf pdf_icon

AP4N1R1CDT-A

AP4N1R1CDT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45VD 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265AG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP4N1R1C series are from Advanced Power innovated designand silicon process technology to a

 8.1. Size:163K  ape
 ap4n1r8cmt-a.pdf pdf_icon

AP4N1R1CDT-A

AP4N1R8CMT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45VD Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N1R8C series are from Advanced Power innovated design andsilicon process technology to achieve

Datasheet: AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT , AP4N2R6J , AP4N2R6H , AP4N2R6AMT , AP4N1R8CMT-A , IRF530 , AP4820AGYT , AP4804MT , AP4800N2 , AP4618CDT , AP4610P , AP4608S , AP4608P , AP4606P .

History: TPCS8007-H | 2SK2938L | TPC65R600C | LN100 | 2SK1081-01 | TPHR8504PL | MTNK5S3

Keywords - AP4N1R1CDT-A MOSFET datasheet

 AP4N1R1CDT-A cross reference
 AP4N1R1CDT-A equivalent finder
 AP4N1R1CDT-A lookup
 AP4N1R1CDT-A substitution
 AP4N1R1CDT-A replacement

 

 
Back to Top

 


 
.