All MOSFET. AP4N1R1CDT-A Datasheet

 

AP4N1R1CDT-A Datasheet and Replacement


   Type Designator: AP4N1R1CDT-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 50.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 172 nC
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 1330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
   Package: PDFN5X6
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AP4N1R1CDT-A Datasheet (PDF)

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AP4N1R1CDT-A

AP4N1R1CDT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45VD 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265AG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP4N1R1C series are from Advanced Power innovated designand silicon process technology to a

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AP4N1R1CDT-A

AP4N1R8CMT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45VD Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N1R8C series are from Advanced Power innovated design andsilicon process technology to achieve

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