IRFI624G Datasheet and Replacement
Type Designator: IRFI624G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 14(max) nC
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 77 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO220F
IRFI624G substitution
IRFI624G Datasheet (PDF)
irfi624g.pdf
PD - 95607IRFI624GPbF Lead-Free7/29/04Document Number: 91147 www.vishay.com1IRFI624GPbFDocument Number: 91147 www.vishay.com2IRFI624GPbFDocument Number: 91147 www.vishay.com3IRFI624GPbFDocument Number: 91147 www.vishay.com4IRFI624GPbFDocument Number: 91147 www.vishay.com5IRFI624GPbFDocument Number: 91147 www.vishay.com6IRFI624GPbFPeak Diode R
irfi624gpbf.pdf
IRFI624G, SiHFI624GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.1f = 60 Hz)RoHS*Qg (Max.) (nC) 14 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 2.7 Dynamic dV/dt RatingQgd (nC) 7.8 Low Thermal ResistanceConfiguration Si
Datasheet: IRFI540N , IRFI550A , IRFI610A , IRFI614A , IRFI614G , IRFI620A , IRFI620G , IRFI624A , IRFZ46N , IRFI630A , IRFI630G , IRFI634A , IRFI634G , IRFI640A , IRFI640G , IRFI644A , IRFI644G .
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