IRFI630G Specs and Replacement
Type Designator: IRFI630G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
IRFI630G substitution
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IRFI630G datasheet
irfi630g.pdf
PD - 94846 IRFI630GPbF Lead-Free 11/14/03 Document Number 91148 www.vishay.com 1 IRFI630GPbF Document Number 91148 www.vishay.com 2 IRFI630GPbF Document Number 91148 www.vishay.com 3 IRFI630GPbF Document Number 91148 www.vishay.com 4 IRFI630GPbF Document Number 91148 www.vishay.com 5 IRFI630GPbF Document Number 91148 www.vishay.com 6 IRFI630GPbF TO-220 Full... See More ⇒
irfi630g sihfi630g.pdf
IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S... See More ⇒
irfw630b irfi630b.pdf
IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switc... See More ⇒
Detailed specifications: IRFI610A, IRFI614A, IRFI614G, IRFI620A, IRFI620G, IRFI624A, IRFI624G, IRFI630A, 18N50, IRFI634A, IRFI634G, IRFI640A, IRFI640G, IRFI644A, IRFI644G, IRFI710A, IRFI720A
Keywords - IRFI630G MOSFET specs
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