AP3P2R2CDT Datasheet. Specs and Replacement

Type Designator: AP3P2R2CDT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 2100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: PDFN5X6

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AP3P2R2CDT datasheet

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AP3P2R2CDT

AP3P2R2CDT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D 100% Rg & UIS Test RDS(ON) 2.2m Ultra Low On-resistance ID4 -205A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 AP3P2R2 series are from Advanced Power innovated design D D D D and silicon process technology to ach... See More ⇒

Detailed specifications: AP4024EYT, AP4024EJB, AP4024EH, AP3R604GMT-L, AP3R303GMT-L, AP3R303GMT, AP3P9R0I, AP3N1R7CYT, 7N60, AP3NR68CDT, AP2604CDT, AP3P010YT, AP3N018EYT, AP3C030YT, AP3800YT, AP3700YT, AP2P9R0LYT

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