All MOSFET. AP3P2R2CDT Datasheet

 

AP3P2R2CDT Datasheet and Replacement


   Type Designator: AP3P2R2CDT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: PDFN5X6
 

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AP3P2R2CDT Datasheet (PDF)

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AP3P2R2CDT

AP3P2R2CDTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD 100% Rg & UIS Test RDS(ON) 2.2m Ultra Low On-resistance ID4 -205AG RoHS Compliant & Halogen-FreeSDescriptionPDFN 5x6AP3P2R2 series are from Advanced Power innovated design D D D Dand silicon process technology to ach

Datasheet: AP4024EYT , AP4024EJB , AP4024EH , AP3R604GMT-L , AP3R303GMT-L , AP3R303GMT , AP3P9R0I , AP3N1R7CYT , MMIS60R580P , AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT , AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT .

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