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AP3P2R2CDT Spec and Replacement


   Type Designator: AP3P2R2CDT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: PDFN5X6

 AP3P2R2CDT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3P2R2CDT Specs

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AP3P2R2CDT

AP3P2R2CDT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D 100% Rg & UIS Test RDS(ON) 2.2m Ultra Low On-resistance ID4 -205A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 AP3P2R2 series are from Advanced Power innovated design D D D D and silicon process technology to ach... See More ⇒

Detailed specifications: AP4024EYT , AP4024EJB , AP4024EH , AP3R604GMT-L , AP3R303GMT-L , AP3R303GMT , AP3P9R0I , AP3N1R7CYT , 7N60 , AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT , AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT .

History: PSMN1R5-25MLH | ATM7N65ATE

Keywords - AP3P2R2CDT MOSFET specs

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