AP2P9R0LYT Datasheet. Specs and Replacement
Type Designator: AP2P9R0LYT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 15.4 A
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PMPAK3X3
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AP2P9R0LYT substitution
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AP2P9R0LYT datasheet
ap2p9r0lyt.pdf
AP2P9R0LYT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4A G S D D Description D AP2P9R0L series are from Advanced Power innovated design and D silicon process technology to achieve the lowest possible o... See More ⇒
Detailed specifications: AP3P2R2CDT, AP3NR68CDT, AP2604CDT, AP3P010YT, AP3N018EYT, AP3C030YT, AP3800YT, AP3700YT, K2611, AP2N3R7LYT, AP2609GYT, AP15TP1R0YT, AP10TN028YT, AP0903GYT, AP3P7R0EMT, AP3P3R0MT, AP3P010AMT
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