AP2P9R0LYT Spec and Replacement
Type Designator: AP2P9R0LYT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 15.4 A
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PMPAK3X3
AP2P9R0LYT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2P9R0LYT Specs
ap2p9r0lyt.pdf
AP2P9R0LYT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4A G S D D Description D AP2P9R0L series are from Advanced Power innovated design and D silicon process technology to achieve the lowest possible o... See More ⇒
Detailed specifications: AP3P2R2CDT , AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT , AP3C030YT , AP3800YT , AP3700YT , K2611 , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT .
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