AP3P3R0MT Specs and Replacement
Type Designator: AP3P3R0MT
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: PMPAK5X6
AP3P3R0MT substitution
- MOSFET ⓘ Cross-Reference Search
AP3P3R0MT datasheet
ap3p3r0mt.pdf
AP3P3R0MT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 -125A G RoHS Compliant & Halogen-Free S D Description D D AP3P3R0 series are from Advanced Power innovated design and silicon D process technology to achieve the ... See More ⇒
ap3p3r0mt.pdf
AP3P3R0MT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 -125A G RoHS Compliant & Halogen-Free S D Description D D AP3P3R0 series are from Advanced Power innovated design and silicon D process technology to achieve the ... See More ⇒
Detailed specifications: AP3700YT , AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT , IRFP064N , AP3P010AMT , AP3NR85CMT , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT , AP3N2R2MT , AP3N1R8MT-L .
Keywords - AP3P3R0MT MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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