AP3NR85CMT Datasheet and Replacement
Type Designator: AP3NR85CMT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00085 Ohm
Package: PMPAK5X6
AP3NR85CMT substitution
AP3NR85CMT Datasheet (PDF)
ap3nr85cmt.pdf

AP3NR85CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 0.85m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3NR85C series are from Advanced Power innovated design andsilicon process technology to achieve t
ap3nr68cdt.pdf

AP3NR68CDTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD 100% Rg & UIS Test RDS(ON) 0.68m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP3NR68C series are from Advanced Power innovated designand silicon process technology to achieve the
Datasheet: AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , IRFP064N , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT , AP3N2R2MT , AP3N1R8MT-L , AP3N1R8MT , AP3N1R7MT .
History: SSW65R090S2 | RDX080N50FU6 | AP2N1K2EN1 | SPP80N06S2L-09 | 2SK3058-ZJ | MTB02N03H8
Keywords - AP3NR85CMT MOSFET datasheet
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History: SSW65R090S2 | RDX080N50FU6 | AP2N1K2EN1 | SPP80N06S2L-09 | 2SK3058-ZJ | MTB02N03H8



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