All MOSFET. AP3N3R3MT Datasheet

 

AP3N3R3MT Datasheet and Replacement


   Type Designator: AP3N3R3MT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 475 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: PMPAK5X6
 

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AP3N3R3MT Datasheet (PDF)

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AP3N3R3MT

AP3N3R3MTHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODE 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 3.3m Ultra Low On-resistanceDG RoHS Compliant & Halogen-FreeDDSDDescriptionAP3N3R3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possi

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AP3N3R3MT

AP3N3R3MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 30VDD Simple Drive Requirement D RDS(ON) 3.3mD Fast Switching Characteristic ID3 21.3AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP3N3R3 series are from Advanced Power innovated design andsilicon process technolog

Datasheet: AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT , AP3N7R2MT , IRF3205 , AP3N2R8MT , AP3N2R4MT , AP3N2R2MT , AP3N1R8MT-L , AP3N1R8MT , AP3N1R7MT , AP3N1R0MT , AP3D5R0MT .

History: PE532DY | OSG60R1K8PF

Keywords - AP3N3R3MT MOSFET datasheet

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