AP3N3R3MT MOSFET Datasheet: N-Ch, 30V, 30A. Full specification with pinout and replacement list

AP3N3R3MT Specs and Replacement

Type Designator: AP3N3R3MT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 25 nC

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 475 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: PMPAK5X6

AP3N3R3MT substitution

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AP3N3R3MT datasheet

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AP3N3R3MT Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 3.3m Ultra Low On-resistance D G RoHS Compliant & Halogen-Free D D S D Description AP3N3R3 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possi... See More ⇒

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AP3N3R3M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS 30V D D Simple Drive Requirement D RDS(ON) 3.3m D Fast Switching Characteristic ID3 21.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP3N3R3 series are from Advanced Power innovated design and silicon process technolog... See More ⇒

Detailed specifications: AP15TP1R0YT, AP10TN028YT, AP0903GYT, AP3P7R0EMT, AP3P3R0MT, AP3P010AMT, AP3NR85CMT, AP3N7R2MT, IRF3205, AP3N2R8MT, AP3N2R4MT, AP3N2R2MT, AP3N1R8MT-L, AP3N1R8MT, AP3N1R7MT, AP3N1R0MT, AP3D5R0MT