All MOSFET. AP3D5R0MT Datasheet

 

AP3D5R0MT MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP3D5R0MT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 13.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: PMPAK5X6

 AP3D5R0MT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3D5R0MT Datasheet (PDF)

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 ap3d5r0mt.pdf

AP3D5R0MT AP3D5R0MT

AP3D5R0MTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 11.5mG1Converter Application CH-2 BVDSS 30VD2/S1 RoHS Compliant & Halogen-Free RDS(ON) 5mG2DescriptionS2Advanced Power MOSFETs from APEC provideG2G2 S2 S2 S2the designe

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