AP1A003GMT Datasheet and Replacement
Type Designator: AP1A003GMT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 1070 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: PMPAK5X6
AP1A003GMT substitution
AP1A003GMT Datasheet (PDF)
ap1a003gmt.pdf

AP1A003GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 1.2m Low On-resistance ID 235AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP1A003 series are from Advanced Power innovated design andsilicon process technology to achi
ap1a003gmt-hf.pdf

AP1A003GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 0.99m Low On-resistance ID 260AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP1A003 series are from Advanced Power innovated design andsilicon process technology to ach
ap1a003p.pdf

AP1A003PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare from Advanced Power innovated designAP1A003series arefrom Advanced Power innovated
Datasheet: AP3D5R0MT , AP3C023AMT , AP3A010MT , AP3A010AMT , AP3700MT , AP2C016LMT , AP2606CMT , AP2602MT , AON6414A , AP10TN5R5MT , AP10TN5R5LMT , AP10TN028MT , AP10TN012LMT , AP10TN010CMT , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT .
History: DMN1029UFDB | CJM1206
Keywords - AP1A003GMT MOSFET datasheet
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History: DMN1029UFDB | CJM1206



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