All MOSFET. IRFI640G Datasheet

 

IRFI640G Datasheet and Replacement


   Type Designator: IRFI640G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 70(max) nC
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

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IRFI640G Datasheet (PDF)

 ..1. Size:1146K  international rectifier
 irfi640gpbf.pdf pdf_icon

IRFI640G

PD- 95420IRFI640GPbF Lead-Free06/16/04Document Number: 91150 www.vishay.com1IRFI640GPbFDocument Number: 91150 www.vishay.com2IRFI640GPbFDocument Number: 91150 www.vishay.com3IRFI640GPbFDocument Number: 91150 www.vishay.com4IRFI640GPbFDocument Number: 91150 www.vishay.com5IRFI640GPbFDocument Number: 91150 www.vishay.com6IRFI640GPbFDocument Num

 ..2. Size:172K  international rectifier
 irfi640g.pdf pdf_icon

IRFI640G

 ..3. Size:1799K  vishay
 irfi640g sihfi640g.pdf pdf_icon

IRFI640G

IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr

 7.1. Size:212K  1
 irfi640a irfw640a.pdf pdf_icon

IRFI640G

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Datasheet: IRFI620G , IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , IRFI634G , IRFI640A , AON7403 , IRFI644A , IRFI644G , IRFI710A , IRFI720A , IRFI720G , IRFI730A , IRFI730G , IRFI734G .

History: 2N7005 | MCH6341 | IRFI720G

Keywords - IRFI640G MOSFET datasheet

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