IRFI644A Datasheet and Replacement
Type Designator: IRFI644A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 46 nC
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO262
IRFI644A substitution
IRFI644A Datasheet (PDF)
irfi644gpbf.pdf
PD - 94862IRFI644GPbF Lead-Free Lead-Free12/03/03Document Number: 91151 www.vishay.com1IRFI644GPbFDocument Number: 91151 www.vishay.com2IRFI644GPbFDocument Number: 91151 www.vishay.com3IRFI644GPbFDocument Number: 91151 www.vishay.com4IRFI644GPbFDocument Number: 91151 www.vishay.com5IRFI644GPbFDocument Number: 91151 www.vishay.com6IRFI644GP
irfi644g sihfi644g.pdf
IRFI644G, SiHFI644GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.28f = 60 Hz)RoHS*Qg (Max.) (nC) 68COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 35 Low Thermal ResistanceConfiguration Si
Datasheet: IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , IRFI634G , IRFI640A , IRFI640G , MMIS60R580P , IRFI644G , IRFI710A , IRFI720A , IRFI720G , IRFI730A , IRFI730G , IRFI734G , IRFI740A .
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