IRFI644G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI644G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 68(max)
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 330
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO220F
IRFI644G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI644G
Datasheet (PDF)
..1. Size:1345K international rectifier
irfi644gpbf.pdf
PD - 94862IRFI644GPbF Lead-Free Lead-Free12/03/03Document Number: 91151 www.vishay.com1IRFI644GPbFDocument Number: 91151 www.vishay.com2IRFI644GPbFDocument Number: 91151 www.vishay.com3IRFI644GPbFDocument Number: 91151 www.vishay.com4IRFI644GPbFDocument Number: 91151 www.vishay.com5IRFI644GPbFDocument Number: 91151 www.vishay.com6IRFI644GP
..3. Size:1398K vishay
irfi644g sihfi644g.pdf
IRFI644G, SiHFI644GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.28f = 60 Hz)RoHS*Qg (Max.) (nC) 68COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 35 Low Thermal ResistanceConfiguration Si
8.2. Size:1146K international rectifier
irfi640gpbf.pdf
PD- 95420IRFI640GPbF Lead-Free06/16/04Document Number: 91150 www.vishay.com1IRFI640GPbFDocument Number: 91150 www.vishay.com2IRFI640GPbFDocument Number: 91150 www.vishay.com3IRFI640GPbFDocument Number: 91150 www.vishay.com4IRFI640GPbFDocument Number: 91150 www.vishay.com5IRFI640GPbFDocument Number: 91150 www.vishay.com6IRFI640GPbFDocument Num
8.4. Size:1799K vishay
irfi640g sihfi640g.pdf
IRFI640G, SiHFI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.18f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 70COMPLIANT Dynamic dV/dt RatingQgs (nC) 13 Low Thermal ResistanceQgd (nC) 39 Lead (Pb)-fr
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