IRFI644G MOSFET Datasheet: N-Ch, 250V, 7.9A. Full specification with pinout and replacement list

IRFI644G Specs and Replacement

Type Designator: IRFI644G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220F

IRFI644G substitution

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IRFI644G datasheet

..1. Size:1345K international rectifier
irfi644gpbf.pdf pdf_icon

PD - 94862 IRFI644GPbF Lead-Free Lead-Free 12/03/03 Document Number 91151 www.vishay.com 1 IRFI644GPbF Document Number 91151 www.vishay.com 2 IRFI644GPbF Document Number 91151 www.vishay.com 3 IRFI644GPbF Document Number 91151 www.vishay.com 4 IRFI644GPbF Document Number 91151 www.vishay.com 5 IRFI644GPbF Document Number 91151 www.vishay.com 6 IRFI644GP... See More ⇒

..2. Size:174K international rectifier
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..3. Size:1398K vishay
irfi644g sihfi644g.pdf pdf_icon

IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si... See More ⇒

7.1. Size:216K 1
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