All MOSFET. IRFI720A Datasheet

 

IRFI720A Datasheet and Replacement


   Type Designator: IRFI720A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO262
 

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IRFI720A Datasheet (PDF)

 ..1. Size:116K  1
 irfi720a irfw720a.pdf pdf_icon

IRFI720A

 7.1. Size:170K  international rectifier
 irfi720g.pdf pdf_icon

IRFI720A

 7.2. Size:666K  fairchild semi
 irfw720b irfi720b.pdf pdf_icon

IRFI720A

November 2001IRFW720B / IRFI720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

 7.3. Size:1499K  vishay
 irfi720g sihfi720g.pdf pdf_icon

IRFI720A

IRFI720G, SiHFI720GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.8f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt RatingQgs (nC) 3.3 Low Thermal ResistanceQgd (nC) 11 Lead (Pb)-fre

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Datasheet: IRFI630G , IRFI634A , IRFI634G , IRFI640A , IRFI640G , IRFI644A , IRFI644G , IRFI710A , AO3401 , IRFI720G , IRFI730A , IRFI730G , IRFI734G , IRFI740A , IRFI740G , IRFI740GLC , IRFI744G .

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