IRFI720A Specs and Replacement

Type Designator: IRFI720A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO262

IRFI720A substitution

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IRFI720A datasheet

 ..1. Size:116K  1
irfi720a irfw720a.pdf pdf_icon

IRFI720A

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 7.1. Size:170K  international rectifier
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IRFI720A

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 7.2. Size:666K  fairchild semi
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IRFI720A

November 2001 IRFW720B / IRFI720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to... See More ⇒

 7.3. Size:1499K  vishay
irfi720g sihfi720g.pdf pdf_icon

IRFI720A

IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.8 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 3.3 Low Thermal Resistance Qgd (nC) 11 Lead (Pb)-fre... See More ⇒

Detailed specifications: IRFI630G, IRFI634A, IRFI634G, IRFI640A, IRFI640G, IRFI644A, IRFI644G, IRFI710A, P60NF06, IRFI720G, IRFI730A, IRFI730G, IRFI734G, IRFI740A, IRFI740G, IRFI740GLC, IRFI744G

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