All MOSFET. AP2904EC4 Datasheet

 

AP2904EC4 Datasheet and Replacement


   Type Designator: AP2904EC4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5000 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: WLCSP
 

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AP2904EC4 Datasheet (PDF)

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AP2904EC4

AP2904EC4Halogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 38m Protection Diode Built-in IS 6A RoHS Compliant & Halogen-FreeDescriptionAP2904 series are from Advanced Power innovated designand silicon process technology to achieve the lowest po

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AP2904EC4

AP2906EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Lower Gate Charge BVDSS 20VD1/D2G1 Capable of 2.5V Gate Drive RDS(ON) 35mS2 Surface mount package ID3 4.7AD1/D2S1SOT-26 RoHS Compliant & Halogen-FreeD1/D2DescriptionAP2906 series are from Advanced Power innovatedG1 G2design and silicon process

Datasheet: AP3990S , AP3700Y , AP30T10GS , AP30T10GI , AP30T10GH , AP30P10GH , AP2N050H , AP2910EC4 , P0903BDG , AP25N170I , AP20WN170P , AP20WN170J , AP20WN170I , AP20WN170H , AP20T15GI , AP1A003P , AP18P10AGJ .

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