AP16T10GH PDF and Equivalents Search

 

AP16T10GH Specs and Replacement

Type Designator: AP16T10GH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm

Package: TO252

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AP16T10GH datasheet

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AP16T10GH

AP16T10GH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Simple Drive Requirement RDS(ON) 185m Surface Mount Package ID 7.5A G RoHS Compliant & Halogen-Free S Description AP16T10 series are from Advanced Power innovated design ... See More ⇒

Detailed specifications: AP20WN170P, AP20WN170J, AP20WN170I, AP20WN170H, AP20T15GI, AP1A003P, AP18P10AGJ, AP18P10AGH, IRF2807, AP15T15GH, AP15P10GI, AP14SL50W, AP14SL50I, AP14SL50H, AP13N50R, AP10TN9R0P, AP10TN6R0P

Keywords - AP16T10GH MOSFET specs

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