All MOSFET. AP16T10GH Datasheet

 

AP16T10GH Datasheet and Replacement


   Type Designator: AP16T10GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm
   Package: TO252
 

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AP16T10GH Datasheet (PDF)

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AP16T10GH

AP16T10GHHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Simple Drive Requirement RDS(ON) 185m Surface Mount Package ID 7.5AG RoHS Compliant & Halogen-FreeSDescriptionAP16T10 series are from Advanced Power innovated design

Datasheet: AP20WN170P , AP20WN170J , AP20WN170I , AP20WN170H , AP20T15GI , AP1A003P , AP18P10AGJ , AP18P10AGH , IRFB31N20D , AP15T15GH , AP15P10GI , AP14SL50W , AP14SL50I , AP14SL50H , AP13N50R , AP10TN9R0P , AP10TN6R0P .

History: SVF4N65CAD | SI4340DDY

Keywords - AP16T10GH MOSFET datasheet

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