IRFI734G Datasheet and Replacement
Type Designator: IRFI734G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
IRFI734G substitution
IRFI734G Datasheet (PDF)
irfi734gpbf.pdf

PD- 95752IRFI734GPbF Lead-Free8/23/04Document Number: 91154 www.vishay.com1IRFI734GPbFDocument Number: 91154 www.vishay.com2IRFI734GPbFDocument Number: 91154 www.vishay.com3IRFI734GPbFDocument Number: 91154 www.vishay.com4IRFI734GPbFDocument Number: 91154 www.vishay.com5IRFI734GPbFDocument Number: 91154 www.vishay.com6IRFI734GPbFPeak Diode Re
irfi734gpbf.pdf

IRFI734G, SiHFI734GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450 High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 1.2 Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 45 Dynamic dV/dtQgs (nC) 6.6 Low Thermal ResistanceQgd (nC) 24 Lead (Pb)-free Configuration SingleDESCRIPTIOND
Datasheet: IRFI640G , IRFI644A , IRFI644G , IRFI710A , IRFI720A , IRFI720G , IRFI730A , IRFI730G , IRF1405 , IRFI740A , IRFI740G , IRFI740GLC , IRFI744G , IRFI820A , IRFI820G , IRFI830A , IRFI830G .
History: AON6667 | 2SJ598-Z-E1
Keywords - IRFI734G MOSFET datasheet
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History: AON6667 | 2SJ598-Z-E1



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