All MOSFET. IRFI734G Datasheet

 

IRFI734G Datasheet and Replacement


   Type Designator: IRFI734G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
 

 IRFI734G substitution

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IRFI734G Datasheet (PDF)

 ..1. Size:258K  international rectifier
 irfi734gpbf.pdf pdf_icon

IRFI734G

PD- 95752IRFI734GPbF Lead-Free8/23/04Document Number: 91154 www.vishay.com1IRFI734GPbFDocument Number: 91154 www.vishay.com2IRFI734GPbFDocument Number: 91154 www.vishay.com3IRFI734GPbFDocument Number: 91154 www.vishay.com4IRFI734GPbFDocument Number: 91154 www.vishay.com5IRFI734GPbFDocument Number: 91154 www.vishay.com6IRFI734GPbFPeak Diode Re

 ..2. Size:241K  international rectifier
 irfi734g.pdf pdf_icon

IRFI734G

 ..3. Size:846K  vishay
 irfi734gpbf.pdf pdf_icon

IRFI734G

IRFI734G, SiHFI734GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450 High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 1.2 Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 45 Dynamic dV/dtQgs (nC) 6.6 Low Thermal ResistanceQgd (nC) 24 Lead (Pb)-free Configuration SingleDESCRIPTIOND

 8.1. Size:117K  1
 irfi730a irfw730a.pdf pdf_icon

IRFI734G

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Keywords - IRFI734G MOSFET datasheet

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