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AP10C325Y Spec and Replacement


   Type Designator: AP10C325Y
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm
   Package: 2928-8

 AP10C325Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP10C325Y Specs

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AP10C325Y

AP10C325Y Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100V D2 D2 HBM ESD 2kV RDS(ON) 325m D1 D1 G2 Fast Switching Performance ID4 2A S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100V G1 S1 2928-8 RDS(ON) 470m Description ID4 -1.5A AP10C325 series are from Advanced P... See More ⇒

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AP10C325Y

AP10C150M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100V D2 D2 Low Gate Charge D1 RDS(ON) 150m D1 Fast Switching Performance ID 2.5A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100V G1 S1 SO-8 RDS(ON) 160m Description ID -2.5A AP10C150 series are from Advanced ... See More ⇒

Detailed specifications: AP10N6R0S , AP10N4R5S , AP10N4R5P , AP10N4R5I , AP10N012P , AP10N012IN , AP10N012I , AP10N012H , 20N60 , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH .

History: AP05FN50I

Keywords - AP10C325Y MOSFET specs

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