AP10C325Y Datasheet and Replacement
Type Designator: AP10C325Y
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm
Package: 2928-8
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AP10C325Y Datasheet (PDF)
ap10c325y.pdf

AP10C325YHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD2D2 HBM ESD 2kV RDS(ON) 325mD1D1G2 Fast Switching Performance ID4 2AS2 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S12928-8RDS(ON) 470mDescription ID4 -1.5AAP10C325 series are from Advanced P
ap10c150m.pdf

AP10C150MHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD2D2 Low Gate Charge D1 RDS(ON) 150mD1 Fast Switching Performance ID 2.5AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S1SO-8RDS(ON) 160mDescription ID -2.5AAP10C150 series are from Advanced
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700
Keywords - AP10C325Y MOSFET datasheet
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History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700



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