AP10C325Y Datasheet. Specs and Replacement

Type Designator: AP10C325Y  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm

Package: 2928-8

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AP10C325Y datasheet

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AP10C325Y

AP10C325Y Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100V D2 D2 HBM ESD 2kV RDS(ON) 325m D1 D1 G2 Fast Switching Performance ID4 2A S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100V G1 S1 2928-8 RDS(ON) 470m Description ID4 -1.5A AP10C325 series are from Advanced P... See More ⇒

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AP10C325Y

AP10C150M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100V D2 D2 Low Gate Charge D1 RDS(ON) 150m D1 Fast Switching Performance ID 2.5A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100V G1 S1 SO-8 RDS(ON) 160m Description ID -2.5A AP10C150 series are from Advanced ... See More ⇒

Detailed specifications: AP10N6R0S, AP10N4R5S, AP10N4R5P, AP10N4R5I, AP10N012P, AP10N012IN, AP10N012I, AP10N012H, 20N60, AP09T10GH, AP09N20BGH, AP0603GH, AP05N50EJ, AP05N50EH, AP05N20GJ, AP05N20GI, AP05N20GH

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.