All MOSFET. AP10C325Y Datasheet

 

AP10C325Y MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP10C325Y
   Marking Code: YY9YSS
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm
   Package: 2928-8

 AP10C325Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP10C325Y Datasheet (PDF)

 ..1. Size:211K  ape
 ap10c325y.pdf

AP10C325Y AP10C325Y

AP10C325YHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD2D2 HBM ESD 2kV RDS(ON) 325mD1D1G2 Fast Switching Performance ID4 2AS2 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S12928-8RDS(ON) 470mDescription ID4 -1.5AAP10C325 series are from Advanced P

 9.1. Size:256K  ape
 ap10c150m.pdf

AP10C325Y AP10C325Y

AP10C150MHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD2D2 Low Gate Charge D1 RDS(ON) 150mD1 Fast Switching Performance ID 2.5AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S1SO-8RDS(ON) 160mDescription ID -2.5AAP10C150 series are from Advanced

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CEM3252 | HUF75343P3

 

 
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