AP05FN50I-HF Datasheet and Replacement
Type Designator: AP05FN50I-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 20 nC
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220F
AP05FN50I-HF substitution
AP05FN50I-HF Datasheet (PDF)
ap05fn50i-hf.pdf

AP05FN50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast trr Performance D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.8 Simple Drive Requirement ID 4.4AG RoHS Compliant & Halogen-FreeSDescriptionAP05FN50 series are specially designed as main switching devicesGfor universal 90~265VAC off-line AC/D
ap05fn50i.pdf

AP05FN50IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast trr Performance D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.6 Simple Drive Requirement ID 4.5AGSDescriptionAP05FN50 provide high blocking voltage to overcome voltage surgeGand sag in the toughest power system with the best combination of fast D
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