AP1003BST Datasheet. Specs and Replacement
Type Designator: AP1003BST 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: CHIP
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AP1003BST datasheet
..1. Size:158K ape
ap1003bst.pdf 
AP1003BST Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 4.7m Low Profile ( ... See More ⇒
9.1. Size:132K ape
ap1005bsq.pdf
AP1005BSQ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 3.8m Low Profile ( ... See More ⇒
9.2. Size:104K ape
ap1001bsq.pdf
AP1001BSQ Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 6m Low Profile ( ... See More ⇒
9.3. Size:99K ape
ap1002bmx.pdf
AP1002BMX Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lead-Free Package D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile ( ... See More ⇒
9.4. Size:133K ape
ap1004cmx.pdf
AP1004CMX Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra-low Forward Diode D BVDSS 30V Low Conductance Loss RDS(ON) 1.8m Low Profile ( ... See More ⇒
9.6. Size:1583K cn apm
ap100n03p ap100n03t.pdf
AP100N03P/T 30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R ... See More ⇒
9.7. Size:1377K cn apm
ap100n03ad.pdf
AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R ... See More ⇒
9.8. Size:903K cn apm
ap100n04d.pdf
AP100N04D 40V N-Channel Enhancement Mode MOSFET Description The AP100N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS D R ... See More ⇒
9.9. Size:1461K cn apm
ap100n08d.pdf
AP100N08D 80V N-Channel Enhancement Mode MOSFET Description The AP100N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =100A DS D R ... See More ⇒
9.10. Size:1663K cn apm
ap100n03d.pdf
AP100N03D 30V N-Channel Enhancement Mode MOSFET Description The AP100N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R ... See More ⇒
9.11. Size:1322K cn apm
ap100n03y.pdf
AP100N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP100N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R ... See More ⇒
9.12. Size:1150K cn apm
ap100p03d.pdf
AP100P03D -30V P-Channel Enhancement Mode MOSFET Description The AP100P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-100A DS D R ... See More ⇒
9.13. Size:1239K cn apm
ap100p02nf.pdf
AP100P02NF -20V P-Channel Enhancement Mode MOSFET Description The AP100P02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-100 A DS D R ... See More ⇒
9.14. Size:1911K cn apm
ap100p04d.pdf
AP100P04D -40V P-Channel Enhancement Mode MOSFET Description The AP100P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-100 A DS D R ... See More ⇒
9.15. Size:1319K cn apm
ap100n04nf.pdf
AP100N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP100N04NF uses advanced APM-SGT II technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100A DS D R ... See More ⇒
Detailed specifications: AP05FN50I, AP05FN50I-HF, AP05N50I-HF, AP0803GMT-A-HF, AP0904GP-HF, AP09N20BGS-HF, AP09N70P-A-HF, AP09N70P-H-LF, IRFB3607, AP1004CMX, AP1005BSQ, AP10N70I-A, AP10P10GK-HF, AP11N50I-HF, AP1203GH, AP1203GM, AP1333GU-HF
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