All MOSFET. IRFI820A Datasheet

 

IRFI820A Datasheet and Replacement


   Type Designator: IRFI820A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO262
 

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IRFI820A Datasheet (PDF)

 ..1. Size:216K  1
 irfi820a irfw820a.pdf pdf_icon

IRFI820A

 7.1. Size:1025K  international rectifier
 irfi820gpbf.pdf pdf_icon

IRFI820A

PD- 95522IRFI820GPbF Lead-Free07/08/04Document Number: 91158 www.vishay.com1IRFI820GPbFDocument Number: 91158 www.vishay.com2IRFI820GPbFDocument Number: 91158 www.vishay.com3IRFI820GPbFDocument Number: 91158 www.vishay.com4IRFI820GPbFDocument Number: 91158 www.vishay.com5IRFI820GPbFDocument Number: 91158 www.vishay.com6IRFI820GPbFPeak Diode R

 7.2. Size:168K  international rectifier
 irfi820g.pdf pdf_icon

IRFI820A

 7.3. Size:1793K  vishay
 irfi820g sihfi820g.pdf pdf_icon

IRFI820A

IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si

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Datasheet: IRFI720G , IRFI730A , IRFI730G , IRFI734G , IRFI740A , IRFI740G , IRFI740GLC , IRFI744G , IRF1405 , IRFI820G , IRFI830A , IRFI830G , IRFI840A , IRFI840G , IRFI840GLC , IRFI9520N , IRFI9530G .

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