IRFI820A Specs and Replacement

Type Designator: IRFI820A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO262

IRFI820A substitution

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IRFI820A datasheet

 ..1. Size:216K  1
 irfi820a irfw820a.pdf pdf_icon

IRFI820A

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 7.1. Size:1025K  international rectifier
 irfi820gpbf.pdf pdf_icon

IRFI820A

PD- 95522 IRFI820GPbF Lead-Free 07/08/04 Document Number 91158 www.vishay.com 1 IRFI820GPbF Document Number 91158 www.vishay.com 2 IRFI820GPbF Document Number 91158 www.vishay.com 3 IRFI820GPbF Document Number 91158 www.vishay.com 4 IRFI820GPbF Document Number 91158 www.vishay.com 5 IRFI820GPbF Document Number 91158 www.vishay.com 6 IRFI820GPbF Peak Diode R... See More ⇒

 7.2. Size:168K  international rectifier
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IRFI820A

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 7.3. Size:1793K  vishay
 irfi820g sihfi820g.pdf pdf_icon

IRFI820A

IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 Dynamic dV/dt Rating Qgd (nC) 13 Low Thermal Resistance Configuration Si... See More ⇒

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Detailed specifications: IRFI720G, IRFI730A, IRFI730G, IRFI734G, IRFI740A, IRFI740G, IRFI740GLC, IRFI744G, IRF830, IRFI820G, IRFI830A, IRFI830G, IRFI840A, IRFI840G, IRFI840GLC, IRFI9520N, IRFI9530G

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