AP11N50I-HF Datasheet and Replacement
Type Designator: AP11N50I-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO220F
AP11N50I-HF substitution
AP11N50I-HF Datasheet (PDF)
ap11n50i-hf.pdf

AP11N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.68 Fast Switching Characteristic ID 11AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedize
ap11n50i.pdf

AP11N50IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.62 Fast Switching Characteristic ID 11AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowGon-resistan
Datasheet: AP09N20BGS-HF , AP09N70P-A-HF , AP09N70P-H-LF , AP1003BST , AP1004CMX , AP1005BSQ , AP10N70I-A , AP10P10GK-HF , IRFP250 , AP1203GH , AP1203GM , AP1333GU-HF , AP13N50W-HF , AP13P15GP , AP13P15GS , AP15N03GI , AP15N03GJ .
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