AP11N50I-HF MOSFET Datasheet: N-Ch, 500V, 11A. Full specification with pinout and replacement list

AP11N50I-HF Specs and Replacement

Type Designator: AP11N50I-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm

Package: TO220F

AP11N50I-HF substitution

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AP11N50I-HF datasheet

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AP11N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.68 Fast Switching Characteristic ID 11A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize... See More ⇒

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AP11N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.62 Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G on-resistan... See More ⇒

Detailed specifications: AP09N20BGS-HF, AP09N70P-A-HF, AP09N70P-H-LF, AP1003BST, AP1004CMX, AP1005BSQ, AP10N70I-A, AP10P10GK-HF, AON7506, AP1203GH, AP1203GM, AP1333GU-HF, AP13N50W-HF, AP13P15GP, AP13P15GS, AP15N03GI, AP15N03GJ