IRFI830A Datasheet and Replacement
Type Designator: IRFI830A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO262
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IRFI830A Datasheet (PDF)
irfi830gpbf sihfi830g.pdf
IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free
irfi830g sihfi830g.pdf
IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free
Datasheet: IRFI730G , IRFI734G , IRFI740A , IRFI740G , IRFI740GLC , IRFI744G , IRFI820A , IRFI820G , IRLZ44N , IRFI830G , IRFI840A , IRFI840G , IRFI840GLC , IRFI9520N , IRFI9530G , IRFI9540N , IRFI9620G .
History: 2SJ532 | WMB014N06LG4 | IXTX170P10P | APT8075BVFRG | MXP4004BT | IRF7606 | TPC8031-H
Keywords - IRFI830A MOSFET datasheet
IRFI830A cross reference
IRFI830A equivalent finder
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History: 2SJ532 | WMB014N06LG4 | IXTX170P10P | APT8075BVFRG | MXP4004BT | IRF7606 | TPC8031-H
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