IRFI830A Specs and Replacement

Type Designator: IRFI830A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO262

IRFI830A substitution

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IRFI830A datasheet

 ..1. Size:213K  1
 irfi830a irfw830a.pdf pdf_icon

IRFI830A

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 7.1. Size:170K  international rectifier
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IRFI830A

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 7.2. Size:1541K  vishay
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IRFI830A

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free... See More ⇒

 7.3. Size:1540K  vishay
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IRFI830A

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free... See More ⇒

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Detailed specifications: IRFI730G, IRFI734G, IRFI740A, IRFI740G, IRFI740GLC, IRFI744G, IRFI820A, IRFI820G, IRF9640, IRFI830G, IRFI840A, IRFI840G, IRFI840GLC, IRFI9520N, IRFI9530G, IRFI9540N, IRFI9620G

Keywords - IRFI830A MOSFET specs

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