AP20P02GH Datasheet and Replacement
Type Designator: AP20P02GH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 31.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 410 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: TO252
AP20P02GH substitution
AP20P02GH Datasheet (PDF)
ap20p02gh ap20p02gj.pdf
AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw
Datasheet: AP6679GP-HF , AP6679GS , AP6679GS-A , AP6679GS-HF , AP6680AGM-HF , AP6680GM , AP6681GMT-HF , AP20N15AGI-HF , 8N60 , AP20P02GJ , AP20T15GM-HF , AP2301AGN , AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN .
History: FQD1N60CTM | AP3P7R0EJB
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History: FQD1N60CTM | AP3P7R0EJB
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