AP20P02GH - описание и поиск аналогов

 

AP20P02GH. Аналоги и основные параметры

Наименование производителя: AP20P02GH

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 31.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 410 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm

Тип корпуса: TO252

Аналог (замена) для AP20P02GH

- подборⓘ MOSFET транзистора по параметрам

 

AP20P02GH даташит

 ..1. Size:80K  ape
ap20p02gh ap20p02gj.pdfpdf_icon

AP20P02GH

AP20P02GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52m Fast Switching ID -18A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast sw

 7.1. Size:2702K  cn apm
ap20p02d.pdfpdf_icon

AP20P02GH

AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 7.2. Size:1388K  cn apm
ap20p02si.pdfpdf_icon

AP20P02GH

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 7.3. Size:1216K  cn apm
ap20p02bf.pdfpdf_icon

AP20P02GH

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

Другие MOSFET... AP6679GP-HF , AP6679GS , AP6679GS-A , AP6679GS-HF , AP6680AGM-HF , AP6680GM , AP6681GMT-HF , AP20N15AGI-HF , IRFB7545 , AP20P02GJ , AP20T15GM-HF , AP2301AGN , AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN .

History: MME60R290QRH | AP20N15AGI-HF | AP2604GY | AP3P090N | 2SK2371

 

 

 

 

↑ Back to Top
.