AP20P02GJ PDF and Equivalents Search

 

AP20P02GJ Specs and Replacement

Type Designator: AP20P02GJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO251

AP20P02GJ substitution

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AP20P02GJ datasheet

 ..1. Size:80K  ape
ap20p02gh ap20p02gj.pdf pdf_icon

AP20P02GJ

AP20P02GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52m Fast Switching ID -18A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast sw... See More ⇒

 7.1. Size:2702K  cn apm
ap20p02d.pdf pdf_icon

AP20P02GJ

AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R ... See More ⇒

 7.2. Size:1388K  cn apm
ap20p02si.pdf pdf_icon

AP20P02GJ

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R ... See More ⇒

 7.3. Size:1216K  cn apm
ap20p02bf.pdf pdf_icon

AP20P02GJ

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R ... See More ⇒

Detailed specifications: AP6679GS, AP6679GS-A, AP6679GS-HF, AP6680AGM-HF, AP6680GM, AP6681GMT-HF, AP20N15AGI-HF, AP20P02GH, AON7403, AP20T15GM-HF, AP2301AGN, AP2301EN-HF, AP2301GN, AP2302GN, AP2302N-HF, AP2303GN, AP2305AGN

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