AP20P02GJ - аналоги и даташиты транзистора

 

AP20P02GJ - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP20P02GJ
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 410 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для AP20P02GJ

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP20P02GJ Datasheet (PDF)

 ..1. Size:80K  ape
ap20p02gh ap20p02gj.pdfpdf_icon

AP20P02GJ

AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw

 7.1. Size:2702K  cn apm
ap20p02d.pdfpdf_icon

AP20P02GJ

AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

 7.2. Size:1388K  cn apm
ap20p02si.pdfpdf_icon

AP20P02GJ

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

 7.3. Size:1216K  cn apm
ap20p02bf.pdfpdf_icon

AP20P02GJ

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

Другие MOSFET... AP6679GS , AP6679GS-A , AP6679GS-HF , AP6680AGM-HF , AP6680GM , AP6681GMT-HF , AP20N15AGI-HF , AP20P02GH , AON7403 , AP20T15GM-HF , AP2301AGN , AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN .

 

 
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