All MOSFET. AP25T03GJ Datasheet

 

AP25T03GJ Datasheet and Replacement


   Type Designator: AP25T03GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6 nC
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO251
 

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AP25T03GJ Datasheet (PDF)

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AP25T03GJ

AP25T03GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLower Gate Charge BVDSS 30V DSimple Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 20A GSDescriptionGThe TO-252 package is universally preferred for all commercial- DSTO-252(H)industrial

Datasheet: AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF , AP2336GN-HF , AP2340GN-HF , AP2346GN-HF , AP2451GY , AP2531GY-HF , IRFP260N , AP2602GY-HF , AP2603GY , AP2605GY-HF , AP2611GY-HF , AP2623GY-HF , AP2625GY-HF , AP2732GK-HF , AP2761I-A-HF .

History: AP2325GEU6-HF

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