AP25T03GJ PDF and Equivalents Search

 

AP25T03GJ Specs and Replacement

Type Designator: AP25T03GJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO251

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AP25T03GJ datasheet

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AP25T03GJ

AP25T03GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 20A G S Description G The TO-252 package is universally preferred for all commercial- D S TO-252(H) industrial ... See More ⇒

Detailed specifications: AP2322GN-HF, AP2325GEU6-HF, AP2333EN-HF, AP2336GN-HF, AP2340GN-HF, AP2346GN-HF, AP2451GY, AP2531GY-HF, IRLZ44N, AP2602GY-HF, AP2603GY, AP2605GY-HF, AP2611GY-HF, AP2623GY-HF, AP2625GY-HF, AP2732GK-HF, AP2761I-A-HF

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