AP70U02GH Specs and Replacement

Type Designator: AP70U02GH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 102 nS

Cossⓘ - Output Capacitance: 202 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

AP70U02GH substitution

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AP70U02GH datasheet

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AP70U02GH

AP70U02GH Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 25V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 60A G RoHS Compliant S Description G The Advanced Power MOSFETs from APEC provide the designer with D S TO-252(H) the best combination of fast switching, ruggedized devi... See More ⇒

Detailed specifications: AP9938GEY-HF, AP9938GEYT-HF, AP9960GH-HF, AP9960GJ-HF, AP70T03AH, AP70T03AJ, AP70T03AS, AP70T03GH-HF, IRF3710, AP72T03GJ-HF, AP72T03GP, AP75T10GS-HF, AP76T03AGMT-HF, AP7811GM, AP4800AGM, AP4816GSM, AP4835GM-HF

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