All MOSFET. AP7811GM Datasheet

 

AP7811GM MOSFET. Datasheet pdf. Equivalent

Type Designator: AP7811GM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 11.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 460 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: SO8

AP7811GM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP7811GM Datasheet (PDF)

1.1. ap7811gm.pdf Size:78K _a-power

AP7811GM
AP7811GM

AP7811GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼Low On-Resistance BVDSS 25V ▼ ▼ ▼ D D ▼Fast Switching D RDS(ON) 12mΩ ▼ ▼ ▼ D ▼Simple Drive Requirement ID 11.8A ▼ ▼ ▼ G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination

Datasheet: AP70T03AJ , AP70T03AS , AP70T03GH-HF , AP70U02GH , AP72T03GJ-HF , AP72T03GP , AP75T10GS-HF , AP76T03AGMT-HF , IRF510 , AP4800AGM , AP4816GSM , AP4835GM-HF , AP4880GEM , AP4953GM , AP4955GM-HF , AP4957AGM-HF , AP50T03GH .

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