AP7811GM MOSFET. Datasheet pdf. Equivalent
Type Designator: AP7811GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V
Maximum Drain Current |Id|: 11.8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 460 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: SO8
AP7811GM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP7811GM Datasheet (PDF)
1.1. ap7811gm.pdf 
Size:78K _a-power
AP7811GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼Low On-Resistance BVDSS 25V ▼ ▼ ▼ D D ▼Fast Switching D RDS(ON) 12mΩ ▼ ▼ ▼ D ▼Simple Drive Requirement ID 11.8A ▼ ▼ ▼ G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination
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