All MOSFET. AP7811GM Datasheet

 

AP7811GM Datasheet and Replacement


   Type Designator: AP7811GM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO8
 

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AP7811GM Datasheet (PDF)

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AP7811GM

AP7811GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 12m DSimple Drive Requirement ID 11.8A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination

Datasheet: AP70T03AJ , AP70T03AS , AP70T03GH-HF , AP70U02GH , AP72T03GJ-HF , AP72T03GP , AP75T10GS-HF , AP76T03AGMT-HF , IRFB4115 , AP4800AGM , AP4816GSM , AP4835GM-HF , AP4880GEM , AP4953GM , AP4955GM-HF , AP4957AGM-HF , AP50T03GH .

History: GSM8936 | SI1489EDH

Keywords - AP7811GM MOSFET datasheet

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