AP7811GM Specs and Replacement
Type Designator: AP7811GM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 11.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SO8
AP7811GM substitution
- MOSFET ⓘ Cross-Reference Search
AP7811GM datasheet
ap7811gm.pdf
AP7811GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 12m D Simple Drive Requirement ID 11.8A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination ... See More ⇒
Detailed specifications: AP70T03AJ, AP70T03AS, AP70T03GH-HF, AP70U02GH, AP72T03GJ-HF, AP72T03GP, AP75T10GS-HF, AP76T03AGMT-HF, P55NF06, AP4800AGM, AP4816GSM, AP4835GM-HF, AP4880GEM, AP4953GM, AP4955GM-HF, AP4957AGM-HF, AP50T03GH
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
