AP60L02GJ Specs and Replacement
Type Designator: AP60L02GJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 415 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO251
AP60L02GJ substitution
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AP60L02GJ datasheet
ap60l02gj ap60l02gh.pdf
AP60L02GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 25V D Simple Drive Requirement RDS(ON) 12m Fast Switching ID 50A G S Description The TO-252 package is universally preferred for all commercial- G industrial surface mount applications and su... See More ⇒
Detailed specifications: AP9578GJ, AP95T07GS-HF, AP95T10AGR-HF, AP9685GM-HF, AP96LT07GP-HF, AP96T07AGP-HF, AP98T03GP, AP98T06GP-HF, AON6380, AP60T03AH, AP60T03AJ, AP60T03AS, AP60T03GJ, AP60T10GP-HF, AP60T10GS-HF, AP60U02GH, AP60U03GH
Keywords - AP60L02GJ MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FDMS7650DC | STT3434N | IRF50N06
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