All MOSFET. AP60L02GJ Datasheet

 

AP60L02GJ Datasheet and Replacement


   Type Designator: AP60L02GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO251
 

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AP60L02GJ Datasheet (PDF)

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AP60L02GJ

AP60L02GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS 25V DSimple Drive Requirement RDS(ON) 12m Fast Switching ID 50A GSDescriptionThe TO-252 package is universally preferred for all commercial-Gindustrial surface mount applications and su

Datasheet: AP9578GJ , AP95T07GS-HF , AP95T10AGR-HF , AP9685GM-HF , AP96LT07GP-HF , AP96T07AGP-HF , AP98T03GP , AP98T06GP-HF , IRLZ44N , AP60T03AH , AP60T03AJ , AP60T03AS , AP60T03GJ , AP60T10GP-HF , AP60T10GS-HF , AP60U02GH , AP60U03GH .

History: AFN1024 | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | BRF4N70 | SM140R50CT1TL

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