AP60L02GJ PDF and Equivalents Search

 

AP60L02GJ Specs and Replacement

Type Designator: AP60L02GJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO251

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AP60L02GJ datasheet

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AP60L02GJ

AP60L02GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 25V D Simple Drive Requirement RDS(ON) 12m Fast Switching ID 50A G S Description The TO-252 package is universally preferred for all commercial- G industrial surface mount applications and su... See More ⇒

Detailed specifications: AP9578GJ, AP95T07GS-HF, AP95T10AGR-HF, AP9685GM-HF, AP96LT07GP-HF, AP96T07AGP-HF, AP98T03GP, AP98T06GP-HF, AON6380, AP60T03AH, AP60T03AJ, AP60T03AS, AP60T03GJ, AP60T10GP-HF, AP60T10GS-HF, AP60U02GH, AP60U03GH

Keywords - AP60L02GJ MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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