All MOSFET. AP60L02GJ Datasheet

 

AP60L02GJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP60L02GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO251

 AP60L02GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP60L02GJ Datasheet (PDF)

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 ap60l02gj ap60l02gh.pdf

AP60L02GJ AP60L02GJ

AP60L02GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS 25V DSimple Drive Requirement RDS(ON) 12m Fast Switching ID 50A GSDescriptionThe TO-252 package is universally preferred for all commercial-Gindustrial surface mount applications and su

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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