AP60U03GH Datasheet and Replacement
Type Designator: AP60U03GH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
AP60U03GH substitution
AP60U03GH Datasheet (PDF)
ap60u03gh.pdf

AP60U03GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 40AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer with GDSthe best combination of fast switching, ruggedized device design, low
ap60u02gh.pdf

AP60U02GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 25V Low On-resistance RDS(ON) 12m Fast Switching Characteristic ID 40AG RoHS CompliantSDescriptionGThe Advanced Power MOSFETs from APEC provide the designer withDS TO-252(H)the best combination of fast switching, rug
Datasheet: AP60L02GJ , AP60T03AH , AP60T03AJ , AP60T03AS , AP60T03GJ , AP60T10GP-HF , AP60T10GS-HF , AP60U02GH , P60NF06 , AP62T02GJ , AP9410GM-HF , AP9412AGM , AP9412BGM , AP9435GJ-HF , AP9435GM , AP9435GP-HF , AP9450GMT-HF .
History: SE2333 | AFN04N60T220FT | GSM6830 | TSM1N60LCH | SIHF9520 | AOTS32334C | DACMI120N120BZK
Keywords - AP60U03GH MOSFET datasheet
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History: SE2333 | AFN04N60T220FT | GSM6830 | TSM1N60LCH | SIHF9520 | AOTS32334C | DACMI120N120BZK



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