IRFIBE30G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFIBE30G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 78(max)
nC
trⓘ - Rise Time: 33
nS
Cossⓘ -
Output Capacitance: 310
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
TO220F
IRFIBE30G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFIBE30G
Datasheet (PDF)
..1. Size:867K international rectifier
irfibe30g.pdf
PD- 95649IRFIBE30GPbF Lead-Free7/26/04Document Number: 91184 www.vishay.com1IRFIBE30GPbFDocument Number: 91184 www.vishay.com2IRFIBE30GPbFDocument Number: 91184 www.vishay.com3IRFIBE30GPbFDocument Number: 91184 www.vishay.com4IRFIBE30GPbFDocument Number: 91184 www.vishay.com5IRFIBE30GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Consi
..2. Size:1395K vishay
irfibe30g sihfibe30g.pdf
IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration
..3. Size:275K inchange semiconductor
irfibe30g.pdf
iscN-Channel MOSFET Transistor IRFIBE30GFEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
8.2. Size:972K international rectifier
irfibe20gpbf.pdf
PD- 95648IRFIBE20GPbF Lead-Free7/26/04Document Number: 91183 www.vishay.com1IRFIBE20GPbFDocument Number: 91183 www.vishay.com2IRFIBE20GPbFDocument Number: 91183 www.vishay.com3IRFIBE20GPbFDocument Number: 91183 www.vishay.com4IRFIBE20GPbFDocument Number: 91183 www.vishay.com5IRFIBE20GPbFDocument Number: 91183 www.vishay.com6IRFIBE20GPbFPeak D
8.3. Size:1534K vishay
irfibe20g sihfibe20g.pdf
IRFIBE20G, SiHFIBE20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 6.5f = 60 Hz)RoHS*Qg (Max.) (nC) 38COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 21 Low Thermal ResistanceConfiguration
8.4. Size:275K inchange semiconductor
irfibe20g.pdf
iscN-Channel MOSFET Transistor IRFIBE20GFEATURESLow drain-source on-resistance:RDS(ON) =6.5 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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