IRFIBE30G Spec and Replacement
Type Designator: IRFIBE30G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220F
IRFIBE30G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFIBE30G Specs
irfibe30g.pdf
PD- 95649 IRFIBE30GPbF Lead-Free 7/26/04 Document Number 91184 www.vishay.com 1 IRFIBE30GPbF Document Number 91184 www.vishay.com 2 IRFIBE30GPbF Document Number 91184 www.vishay.com 3 IRFIBE30GPbF Document Number 91184 www.vishay.com 4 IRFIBE30GPbF Document Number 91184 www.vishay.com 5 IRFIBE30GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Consi... See More ⇒
irfibe30g sihfibe30g.pdf
IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.6 Dynamic dV/dt Rating Qgd (nC) 45 Low Thermal Resistance Configuration ... See More ⇒
irfibe30g.pdf
iscN-Channel MOSFET Transistor IRFIBE30G FEATURES Low drain-source on-resistance RDS(ON) =3.0 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Detailed specifications: IRFIB5N65A , IRFIB6N60A , IRFIB7N50A , IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFZ44 , IRFIBF20G , IRFIBF30G , IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E .
Keywords - IRFIBE30G MOSFET specs
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