IRF231 PDF and Equivalents Search

 

IRF231 Specs and Replacement

Type Designator: IRF231

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO3

IRF231 substitution

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IRF231 datasheet

 ..1. Size:177K  1
 irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf pdf_icon

IRF231

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 ..2. Size:216K  samsung
 irf230 irf231 irf232 irf233.pdf pdf_icon

IRF231

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 9.1. Size:147K  international rectifier
 2n6758 irf230.pdf pdf_icon

IRF231

PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒

 9.2. Size:177K  fairchild semi
 irf630-6333 irf230-233 mtp12n18-20.pdf pdf_icon

IRF231

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Detailed specifications: AP85T10GR-HF, AP90T03GS, AP90T03P-HF, AP90T10GP-HF, AP92LT10GP-HF, AP92T03GH, AP92T03GS, AP93T03AGH-HF, 60N06, IRF232, IRF233, IRF240SMD, IRF241, IRF242, IRF243, IRF250B, IRF250C

Keywords - IRF231 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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