IRF231 Datasheet and Replacement
Type Designator: IRF231
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3
IRF231 substitution
IRF231 Datasheet (PDF)
2n6758 irf230.pdf

PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique
Datasheet: AP85T10GR-HF , AP90T03GS , AP90T03P-HF , AP90T10GP-HF , AP92LT10GP-HF , AP92T03GH , AP92T03GS , AP93T03AGH-HF , AO4468 , IRF232 , IRF233 , IRF240SMD , IRF241 , IRF242 , IRF243 , IRF250B , IRF250C .
History: SSM20P02GH | PSMN2R8-40YSD
Keywords - IRF231 MOSFET datasheet
IRF231 cross reference
IRF231 equivalent finder
IRF231 lookup
IRF231 substitution
IRF231 replacement
History: SSM20P02GH | PSMN2R8-40YSD



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