All MOSFET. IRF231 Datasheet

 

IRF231 Datasheet and Replacement


   Type Designator: IRF231
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3
 

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IRF231 Datasheet (PDF)

 ..2. Size:216K  samsung
irf230 irf231 irf232 irf233.pdf pdf_icon

IRF231

 9.1. Size:147K  international rectifier
2n6758 irf230.pdf pdf_icon

IRF231

PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique

 9.2. Size:177K  fairchild semi
irf630-6333 irf230-233 mtp12n18-20.pdf pdf_icon

IRF231

Datasheet: AP85T10GR-HF , AP90T03GS , AP90T03P-HF , AP90T10GP-HF , AP92LT10GP-HF , AP92T03GH , AP92T03GS , AP93T03AGH-HF , AO4468 , IRF232 , IRF233 , IRF240SMD , IRF241 , IRF242 , IRF243 , IRF250B , IRF250C .

History: SSM20P02GH | PSMN2R8-40YSD

Keywords - IRF231 MOSFET datasheet

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