IRFIBF30G Datasheet and Replacement
Type Designator: IRFIBF30G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: TO220F
IRFIBF30G substitution
IRFIBF30G Datasheet (PDF)
irfibf30g.pdf

PD - 94874IRFIBF30GPbF Lead-Free12/9/03Document Number: 91186 www.vishay.com1IRFIBF30GPbFDocument Number: 91186 www.vishay.com2IRFIBF30GPbFDocument Number: 91186 www.vishay.com3IRFIBF30GPbFDocument Number: 91186 www.vishay.com4IRFIBF30GPbFDocument Number: 91186 www.vishay.com5IRFIBF30GPbFDocument Number: 91186 www.vishay.com6IRFIBF30GPbFTO-22
irfibf30g sihfibf30g.pdf

IRFIBF30G, SiHFIBF30GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.7RoHS*f = 60 Hz)Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 42 Low Thermal ResistanceConfiguration Sin
irfibf20gpbf.pdf

PD- 95650IRFIBF20GPbF Lead-Free7/26/04Document Number: 91185 www.vishay.com1IRFIBF20GPbFDocument Number: 91185 www.vishay.com2IRFIBF20GPbFDocument Number: 91185 www.vishay.com3IRFIBF20GPbFDocument Number: 91185 www.vishay.com4IRFIBF20GPbFDocument Number: 91185 www.vishay.com5IRFIBF20GPbFDocument Number: 91185 www.vishay.com6IRFIBF20GPbFPeak D
Datasheet: IRFIB7N50A , IRFIBC20G , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRFIBF20G , IRF1404 , IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A .
Keywords - IRFIBF30G MOSFET datasheet
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