IRLMS1902PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLMS1902PBF
Marking Code: A*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
|Id|ⓘ - Maximum Drain Current: 3.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT26
IRLMS1902PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLMS1902PBF Datasheet (PDF)
irlms1902.pdf
PD - 9.1540BIRLMS1902HEXFET Power MOSFET Generation V Technology Micro6 Package StyleVDSS = 20V Ultra Low Rds(on) N-Channel MOSFETRDS(on) = 0.10DescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andrugged
irlms1902trpbf.pdf
PD - 95359IRLMS1902PbFHEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFETl Lead-Free3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per
irlms1902tr.pdf
PD - 91540CIRLMS1902HEXFET Power MOSFETl Generation V TechnologyA1 6D Dl Micro6 Package StyleVDSS = 20Vl Ultra Low RDS(on)25DDl N-Channel MOSFET3 4G SRDS(on) = 0.10DescriptionTop ViewFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. T
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