IRLMS1902PBF - аналоги, параметры транзистора

IRLMS1902PBF даташит

5.1. Size:108K international rectifier
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PD - 9.1540B IRLMS1902 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 20V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged

5.2. Size:191K international rectifier
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PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET l Lead-Free 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

5.3. Size:184K international rectifier
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PD - 91540C IRLMS1902 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = 20V l Ultra Low RDS(on) 2 5 D D l N-Channel MOSFET 3 4 G S RDS(on) = 0.10 Description Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

Другие MOSFET... IRF450C , IRF460B , IRF460C , IRF510PBF , IRF510STRLPBF , IRF510STRRPBF , IRLMS1503PBF-1 , IRLMS1503PBF , SI2302 , IRLMS2002PBF , IRLMS5703PBF , IRLMS6702PBF-1 , IRLMS6702PBF , IRLMS6802PBF , IRF1503L , IRF1503LPBF , IRF1503PBF .