IRF1704 Specs and Replacement
Type Designator: IRF1704
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 170 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 1660 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220AB
IRF1704 substitution
- MOSFET ⓘ Cross-Reference Search
IRF1704 datasheet
irf1704.pdf
PD -94012C AUTOMOTIVE MOSFET IRF1704 Benefits HEXFET Power MOSFET 200 C Operaing Temperature D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.004 Fast Switching G Repetitive Avalanche Allowed up to Tj Max ID = 170A S Automotive Qualified (Q101) Description Specifically designed for Automotive applications, this... See More ⇒
Detailed specifications: IRF1503L, IRF1503LPBF, IRF1503PBF, IRF1503SPBF, IRF150B, IRF150C, IRF150SMD, IRF1607PBF, STP65NF06, IRF1902PBF, IRF200B211, IRLL2705PBF, IRLL3303PBF, IRLL014NPBF, IRLL014PBF, IRLL024NPBF, IRLL024ZPBF
Keywords - IRF1704 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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