IRF1704 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1704
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 170 A
Tjⓘ - Maximum Junction Temperature: 200 °C
Qgⓘ - Total Gate Charge: 170 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 1660 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220AB
IRF1704 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF1704 Datasheet (PDF)
irf1704.pdf
PD -94012CAUTOMOTIVE MOSFETIRF1704BenefitsHEXFET Power MOSFET 200C Operaing TemperatureD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.004 Fast SwitchingG Repetitive Avalanche Allowedup to Tj MaxID = 170A S Automotive Qualified (Q101)DescriptionSpecifically designed for Automotive applications, this
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STP2N80
History: STP2N80
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918