IRF1902PBF MOSFET Datasheet: N-Ch, 20V, 4.2A. Full specification with pinout and replacement list

IRF1902PBF Specs and Replacement

Type Designator: IRF1902PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SO8

IRF1902PBF substitution

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IRF1902PBF datasheet

..1. Size:134K international rectifier
irf1902pbf.pdf pdf_icon

PD - 95496 IRF1902PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l N-Channel MOSFET 20V 85@VGS = 4.5V 4.0A l Surface Mount 170@VGS = 2.7V 3.2A l Available in Tape & Reel l Lead-Free A A Description 1 8 S D These N-Channel HEXFET power MOSFETs from 2 7 S D International Rectifier utilize advanced processing techniques to achieve the extremely lo... See More ⇒

7.1. Size:107K international rectifier
irf1902.pdf pdf_icon

PD - 94282A IRF1902 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) N-Channel MOSFET 20V 85@VGS = 4.5V 4.0A Surface Mount 170@VGS = 2.7V 3.2A Available in Tape & Reel A A Description 1 8 S D These N-Channel HEXFET power MOSFETs from 2 7 S D International Rectifier utilize advanced processing techniques to achieve the extr... See More ⇒

Detailed specifications: IRF1503LPBF, IRF1503PBF, IRF1503SPBF, IRF150B, IRF150C, IRF150SMD, IRF1607PBF, IRF1704, IRF1405, IRF200B211, IRLL2705PBF, IRLL3303PBF, IRLL014NPBF, IRLL014PBF, IRLL024NPBF, IRLL024ZPBF, IRLL110TRPBF