IRLL3303PBF Datasheet and Replacement
Type Designator: IRLL3303PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 4.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SOT223
- MOSFET Cross-Reference Search
IRLL3303PBF Datasheet (PDF)
irll3303pbf.pdf

PD- 95223IRLL3303PbF Surface MountHEXFET Power MOSFET Dynamic dv/dt RatingD Logic-Level Gate DriveVDSS = 30V Fast Switching Ease of ParallelingRDS(on) = 0.031 Advanced Process TechnologyG Ultra Low On-Resistance Lead-Free ID = 4.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely
irll3303.pdf

PD- 91379CIRLL3303HEXFET Power MOSFET Surface MountD Dynamic dv/dt RatingVDSS = 30V Logic-Level Gate Drive Fast SwitchingRDS(on) = 0.031 Ease of ParallelingG Advanced Process TechnologyID = 4.6A Ultra Low On-ResistanceSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resis
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRF9952PBF | FQPF27N25 | 2SJ254 | GSM4401S | SFS06R02UGF | AO3407A | AFN06N60T251T
Keywords - IRLL3303PBF MOSFET datasheet
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History: IRF9952PBF | FQPF27N25 | 2SJ254 | GSM4401S | SFS06R02UGF | AO3407A | AFN06N60T251T



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